PART |
Description |
Maker |
K1S321615M K1S321615M-E K1S321615M-EE10 |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet 2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic Samsung semiconductor
|
K1S6416BCC K1S6416BCC-I |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung semiconductor
|
K1S2816BCM-I K1S2816BCM |
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG[Samsung semiconductor]
|
KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16)的CMOS掩模ROM2兆位Mx8 / 2Mx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
UPD23C64040JLGX-XXX UPD23C64080JLGY-XXX-MKH |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式)页面访问模式
|
http:// NEC, Corp. NEC Corp.
|
MSM51V16400D MSM51V16400DSL MSM51V16400D-50SJ MSM5 |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器:快速页面模式型 DRAM / FAST PAGE MODE TYPE
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD.
|
MSM51V16160A |
DRAM / FAST PAGE MODE TYPE 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI SEMICONDUCTOR CO., LTD. OKI[OKI electronic componets] OKI electronic components
|
UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|